Multilayer Boron Films and Band Gap Transition

DOI 機関リポジトリ (HANDLE) オープンアクセス
  • HOSSAIN Shahadat
    Department of Molecular and Material Sciences, Interdisciplinary Graduate School of Engineering, Kyushu University : Graduate Student Bangladesh Atomic Energy Commission
  • IWAKI Tensei
    Department of Interdisciplinary Engineering Sciences, Interdisciplinary Graduate School of Engineering, Kyushu University : Graduate Student
  • 中川 剛志
    Department of Advanced Materials Science and Engineering, Faculty of Engineering Sciences, Kyushu University

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説明

We report the growth of multilayer boron films on Mo(112) surface by e-beam deposition. Subsequent annealing after deposition shows ordered structure of c(2×2) for 1st layer, which is consistent with an earlier study. Additional deposition of boron atoms revealed no ordered structure for 2nd and 3rd layer as evident from scanning tunneling microscopy and low energy electron diffraction. Scanning tunneling spectroscopy measurements demonstrate the semiconducting nature of the 2nd and 3rd layer with a band gap of 1.2 and 1.4 eV, respectively. On the other hand, 1st layer is metallic. These results show prospects for the practical applications of boron based nanomaterials in the future.

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詳細情報 詳細情報について

  • CRID
    1390293015559021312
  • NII書誌ID
    AA1147319X
  • DOI
    10.15017/4795525
  • HANDLE
    2324/4795525
  • ISSN
    13467883
  • 本文言語コード
    en
  • データソース種別
    • JaLC
    • IRDB
  • 抄録ライセンスフラグ
    使用可

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