Enhancement of red luminescence intensity of Eu-doped GaN LED structures by metal nanoparticles on thin p-GaN cap layer
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- Yamada Tomoya
- Osaka Univ.
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- Inaba Tomohiro
- Osaka Univ.
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- Tatebayashi Jun
- Osaka Univ.
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- Fujiwara Yasufumi
- Osaka Univ.
Bibliographic Information
- Other Title
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- 薄膜p-GaN上金属ナノ粒子によるEu添加GaN LED構造の発光強度増大
Journal
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- JSAP Annual Meetings Extended Abstracts
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JSAP Annual Meetings Extended Abstracts 2017.2 (0), 3167-3167, 2017-08-25
The Japan Society of Applied Physics
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Keywords
Details 詳細情報について
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- CRID
- 1390293943110203264
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- ISSN
- 24367613
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- Text Lang
- ja
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- Data Source
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- JaLC