Preparation of AlGaN/GaN HEMT structures on amorphous substrates with graphene buffer layers
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- Watahiki Kosuke
- IIS,Univ. of Tokyo
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- Kobayashi Hiroshi
- IIS,Univ. of Tokyo
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- Ohta Jitsuo
- IIS,Univ. of Tokyo JST-PRESTO
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- Ueno Kohei
- IIS,Univ. of Tokyo
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- Kobayashi Atsushi
- IIS,Univ. of Tokyo
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- Fujioka Hiroshi
- IIS,Univ. of Tokyo JST-ACCEL
Bibliographic Information
- Other Title
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- グラフェンバッファ層を用いた非晶質基板上へのAlGaN/GaN HEMT構造の作製
Journal
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- JSAP Annual Meetings Extended Abstracts
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JSAP Annual Meetings Extended Abstracts 2017.1 (0), 3448-3448, 2017-03-01
The Japan Society of Applied Physics
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Keywords
Details 詳細情報について
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- CRID
- 1390294186615137664
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- ISSN
- 24367613
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- Text Lang
- ja
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- Data Source
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- JaLC