Fully Integrated Bandpass Filter with High Isolation Attenuator Function Using Semi-Conductor Distributed Doped Areas
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- Corentin Le Lez
- Univ. Brest
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- Rozenn Allanic
- Univ. Brest
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- Denis Le Berre
- Univ. Brest
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- Cédric Quendo
- Univ. Brest
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- Rose-Marie Sauvage
- DGA/AID
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- Aude Leuliet
- Thales-LAS
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- Thomas Merlet
- Thales-LAS
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- Douglas Silva De Vasconcellos
- Université de Tours
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- Virginie Grimal
- Université de Tours
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- Damien Valente
- Université de Tours
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- Jérôme Billoué
- Université de Tours
Abstract
In this paper, a quarter wavelength coupled lines X-band bandpass filter (BPF) integrating an attenuator feature is presented. The high rejection analog attenuator uses integrated Semiconductor Distributed Doped Areas (ScDDAs) on silicon substrate as tunable resistors. The measured insertion loss of 2.8 dB and attenuation range of 42 dB allow a precise control of the transmitted power for highly integrated systems. A coupled semiconductor physics and electromagnetic structure simulation framework is also proposed in retro-simulations to improve design accuracy of distributed semiconductor devices.
Journal
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- IEICE Proceeding Series
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IEICE Proceeding Series 73 443-445, 2022-11-29
The Institute of Electronics, Information and Communication Engineers
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Details 詳細情報について
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- CRID
- 1390295901054767232
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- ISSN
- 21885079
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- Text Lang
- en
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- Data Source
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- JaLC
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- Abstract License Flag
- Disallowed