アモルファスGdFeフェリ磁性合金薄膜における異常ネルンスト係数への異常ホール抵抗率の寄与

DOI

書誌事項

タイトル別名
  • Effect of Anomalous Hall Resistivity on Anomalous Nernst Coefficient in Amorphous GdFe Ferrimagnetic Alloy Thin Film

抄録

<p>  The anomalous Nernst effect (ANE), which is the generation of transverse voltage due to a mutually orthogonal temperature gradient and magnetization, has been studied with several types of magnetic materials. We investigated the contribution of the anomalous Hall effect (AHE) to ANE in amorphous GdFe ferrimagnetic alloy thin film with precise composition control. According to transverse and longitudinal voltage measurements with an applied temperature gradient or current, the anomalous Nernst voltage and anomalous Hall voltage showed a magnetic field dependence reflecting that of the net magnetization. It was also found that the Gd-composition ratio dependence of the anomalous Nernst coefficient was similar to that of anomalous Hall resistivity. Furthermore, an anomalous Nernst component due to AHE with a Seebeck current was estimated to contribute to the anomalous Nernst voltage by at least more than 13 %. In amorphous GdFe ferrimagnetic alloy thin film, the AHE is considered to be one of the essential mechanisms for ANE.</p>

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詳細情報 詳細情報について

  • CRID
    1390295956280212352
  • DOI
    10.20819/msjtmsj.23tr514
  • ISSN
    24320471
  • 本文言語コード
    ja
  • データソース種別
    • JaLC
  • 抄録ライセンスフラグ
    使用不可

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