High-Speed Semiconductor Laser Technologies for Data Center beyond 400 GbE
-
- NAOE Kazuhiko
- Lumentum Japan, Inc.
-
- SASADA Noriko
- Lumentum Japan, Inc.
-
- YAMAUCHI Syunya
- Lumentum Japan, Inc.
-
- NAKANISHI Akira
- Lumentum Japan, Inc.
-
- NAKAJIMA Takayuki
- Lumentum Japan, Inc.
-
- NAKAI Yoshihiro
- Lumentum Japan, Inc.
-
- ASAKURA Hideaki
- Lumentum Japan, Inc.
-
- ONGA Masaru
- Lumentum Japan, Inc.
-
- YAMAGUCHI Yoriyoshi
- Lumentum Japan, Inc.
Bibliographic Information
- Other Title
-
- 400 GbE超のデータセンタを支える高速半導体レーザ技術
Abstract
The data rate in transceiver module is going to increase from 100 Gbps to 400 Gbps and even to 800 Gbps due to global data traffic increasing. 4-level pulse amplitude modulation (PAM4) format has been standardized for 400 GbE instead of conventional non-return-to-zero (NRZ) format. We review high speed directly modulated DFB lasers and electro-absorption modulator integrated distribute feedback (EA-DFB) lasers technologies for 100 G-PAM4 operation. Additionally, we describe 200 G-PAM4 EA-DFB for 200 Gbps per lane and 384 Gbps-PAM8 EA-DFB for upcoming 400 Gbps per lane.
- Tweet
Keywords
Details 詳細情報について
-
- CRID
- 1390296221533615232
-
- ISSN
- 18810217
-
- Text Lang
- ja
-
- Data Source
-
- JaLC
-
- Abstract License Flag
- Disallowed