Bibliographic Information
- Other Title
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- 光散乱トモグラフィによる単結晶の欠陥評価
- ヒカリ サンラン トモグラフィ ニ ヨル タンケッショウ ノ ケッカン ヒョウカ
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Description
Defects in several compound semiconducting single crystals are evaluated by using the light scattering tomography. The dislocations in ZnSe and ZnO single crystals are observed by decorating them with precipitate, which were generated by heat treatment. We obtain three dimensional views of linear and curved dislocations in ZnSe crystals. Linear dislocations are detected for the first time by several annealing. Micropipes along growth direction are also found by this method.
Journal
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- 福井工業大学研究紀要. 第一部
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福井工業大学研究紀要. 第一部 (37), 25-32, 2007-05-31
福井工業大学
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Details 詳細情報について
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- CRID
- 1390296288051658752
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- NII Article ID
- 110006459227
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- NII Book ID
- AN10503694
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- ISSN
- 02868571
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- NDL BIB ID
- 8875681
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- Text Lang
- ja
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- Data Source
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- JaLC
- IRDB
- NDL
- CiNii Articles
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- Abstract License Flag
- Allowed