MOVPE Growth of GaN on ScAlMgO<sub>4</sub> Substrate
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- Iwabuchi Takuya
- IMR, Tohoku Univ.
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- Kuboya Shigeyuki
- IMR, Tohoku Univ.
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- Tanikawa Tomoyuki
- IMR, Tohoku Univ. JST-CREST
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- Hanada Takashi
- IMR, Tohoku Univ. JST-CREST
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- Katayama Ryuji
- IMR, Tohoku Univ. JST-CREST
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- Minato Akio
- Fukuda Crystal Laboratory
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- Fukuda Tsuguo
- Fukuda Crystal Laboratory
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- Matsuoka Takashi
- IMR, Tohoku Univ. JST-CREST
Bibliographic Information
- Other Title
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- ScAlMgO<sub>4</sub>基板上におけるGaNのMOVPE成長
Journal
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- JSAP Annual Meetings Extended Abstracts
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JSAP Annual Meetings Extended Abstracts 2014.1 (0), 3317-3317, 2014-03-03
The Japan Society of Applied Physics
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Keywords
Details 詳細情報について
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- CRID
- 1390296685880493696
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- ISSN
- 24367613
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- Text Lang
- ja
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- Data Source
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- JaLC