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Fundamentally Different Magnetoresistance Mechanisms in Related Co/Pd and Co/Pt Multilayers for Spintronic Applications
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- Wu W.-B.
- College of Physical Science and Technology, Dalian University
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- Kasiuk J.
- Belarusian State University
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- Przewoźnik J.
- AGH University of Krakow, Faculty of Physics and Applied Computer Science, Department of Solid State Physics
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- Kapusta Cz.
- AGH University of Krakow, Faculty of Physics and Applied Computer Science, Department of Solid State Physics
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- Svito I.
- Belarusian State University
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- Tung Do K.
- Institute of Materials Science, Vietnam Academy of Science and Technology
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- Huong Nguyen T.
- Institute of Materials Science, Vietnam Academy of Science and Technology
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- Manh Dinh H.
- Physics Department, Hanoi National University of Education
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- Åkerman J.
- Department of Physics, University of Gothenburg
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- Anh Nguyen T.N.
- Institute of Materials Science, Vietnam Academy of Science and Technology Graduate University of Science and Technology, Vietnam Academy of Science and Technology
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Description
<p>In this research, we have analyzed the electrical resistance of Co/Pd and Co/Pt thin multilayered films with perpendicular magnetic anisotropy (PMA) deposited by magnetron sputtering to determine and compare their magnetoresistance (MR) mechanisms. The studies were carried out depending on the magnitude and direction of the applied magnetic field in a wide temperature range T = 3–300 K. It is shown that both the isotropic and angle-dependent MR mechanisms are different for these two films studied. Magnon and anisotropic MR mechanisms (MMR and AMR) are found to be characteristic of the Co/Pd film, while Lorentz and spin Hall MR mechanisms (LMR and SMR) determine the magnetotransport in the Co/Pt film. The revealed differences in the MR mechanisms are discussed in terms of the quality of interfaces and properties of 5d (4d) metals.</p>
Journal
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- MATERIALS TRANSACTIONS
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MATERIALS TRANSACTIONS 64 (9), 2124-2127, 2023-09-01
The Japan Institute of Metals and Materials
