Modeling High Frequency 13.56 MHz Full Bridge Inverter Based on GaN MOSFET for EV Wireless Charging System

Meiyanto Eko Sulistyo, Gustav Lukman Adhi Pradhityo, Muharam Aam, Nugroho Asep, Amin, Kaleg Sunarto, Alexander Christhanto Budiman, Sudirja, Ristiana Rina, Hattori Reiji

doi:10.5109/7151734

This paper presents a modelling of a high-frequency full bridge inverter for wireless power transmission (WPT) in Electric Vehicle (EV) charging applications. The inverter is designated at an operating frequency as high as 13.56 MHz in line with regulations for the industrial, scientific, and medical radio band (ISM band). Since the power is transferred wirelessly from the source to the EV, a coupling capacitive was used as a transmitter and receiver of the system. In this paper, the inverter model was simulated and analysed using LTSpice software. Different load changes and power are injected into the system. Furthermore, in order to obtain a robust system, the switching frequency of 13.56 MHz is used with some Dead Time (DT). The system already uses GaN MOSFETs for reliability and performance at high frequencies, in addition to LC impedance matching. The result is that by operating at a resonant frequency of 13.56 MHz with a resistive load of 50, it is obtained with a power of 2.3 kW that has been successfully transmitted with an efficiency of 89%.

Modeling High Frequency 13.56 MHz Full Bridge Inverter Based on GaN MOSFET for EV Wireless Charging System

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Modeling High Frequency 13.56 MHz Full Bridge Inverter Based on GaN MOSFET for EV Wireless Charging System

説明

収録刊行物

キーワード

詳細情報 詳細情報について

書き出し

問題の指摘

詳細情報詳細情報について