Structural Features of the Epitaxial Layer of the (GaAs)<sub>1−</sub><i><sub>y</sub></i><sub>−</sub><i><sub>z</sub></i>(Ge<sub>2</sub>)<i><sub>y</sub></i>(ZnSe)<i><sub>z</sub></i> Solid Solution Grown from a Bismuth Solution Melt
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- Saidov A. S.
- Physical-Technical Institute, Uzbekistan Academy of Sciences
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- Kalanov M.
- Institute of Nuclear Physics, Uzbekistan Academy of Sciences
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- Saparov D. V.
- Physical-Technical Institute, Uzbekistan Academy of Sciences
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- Usmonov Sh. N.
- Physical-Technical Institute, Uzbekistan Academy of Sciences
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- Eshonkhojaev D. A.
- Andijan Machine Building Institute
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- Tagaev M. B.
- Karakalpak State University named after Berdak
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- Akhmedov A. M.
- Tashkent Institute of Irrigation and Agriculture Mechanization Engineers
抄録
<p>This paper presents the results of experimental studies of the structural characteristics of the epitaxial layers of GaAs1−x−yZnSexGey solid solutions grown from a bismuth solution-melt on GaAs substrates with (100) crystallographic orientation. The grown epitaxial film of the GaAs1−x−yZnSexGey solid solution is a single crystal with a sphalerite-like structure with the (100) orientation corresponding to the substrate orientation. It is shown that ZnSe molecules partially replace GaAs molecules in defect-capable regions of the (100) matrix crystal lattice at the high-potential sites.</p>
収録刊行物
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- e-Journal of Surface Science and Nanotechnology
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e-Journal of Surface Science and Nanotechnology advpub (0), 2024-04-04
公益社団法人 日本表面真空学会
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詳細情報 詳細情報について
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- CRID
- 1390299693914246784
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- ISSN
- 13480391
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- Crossref
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- 抄録ライセンスフラグ
- 使用可