Characterization of Photoacid Generator Bound Resist with X-ray Absorption Spectroscopy at NewSUBARU

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  • Yamakawa Shinji
    Center for EUV Lithography, Laboratory of Advanced Science and Technology for Industry, University of Hyogo
  • Harada Tetsuo
    Center for EUV Lithography, Laboratory of Advanced Science and Technology for Industry, University of Hyogo
  • Nakanishi Koji
    Laboratory of Advanced Science and Technology for Industry, University of Hyogo
  • Watanabe Takeo
    Center for EUV Lithography, Laboratory of Advanced Science and Technology for Industry, University of Hyogo

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<p>Post-synthesis or post-extreme ultraviolet (EUV)-exposure chemical analysis is necessary to develop resist materials on the next-generation EUV lithography. It is effective to use the X-ray analysis method for a resist coated on a Si wafer. In this paper, the photoacid generator (PAG) unit in the PAG bound type resist is analyzed by the X-ray absorption spectroscopy (XAS). As a result, the amount of anion species in PAG was estimated by sulfur K-edge (S K-edge) XAS spectrum. Further, the chemical structure of resist after the EUV irradiation was suggested by carbon K-edge (C K-edge) and sulfur L-edge (S L-edge) XAS spectra.</p>

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