150GHz Fundamental Oscillator Utilizing Transmission-Line-Based Inter-Stage Matching in 130nm SiGe BiCMOS Technology
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- KANO Sota
- Department of Electrical Engineering and Information Systems, The University of Tokyo
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- IIZUKA Tetsuya
- Department of Electrical Engineering and Information Systems, The University of Tokyo Systems Design Lab, School of Engineering, The University of Tokyo
Description
<p>A 150GHz fundamental oscillator employing an inter-stage matching network based on a transmission line is presented in this letter. The proposed oscillator consists of a two-stage common-emitter amplifier loop, whose inter-stage connections are optimized to meet the oscillation condition. The oscillator is designed in a 130-nm SiGe BiCMOS process that offers fT and fMAX of 350GHz and 450GHz. According to simulation results, an output power of 3.17dBm is achieved at 147.6GHz with phase noise of -115dBc/Hz at 10MHz offset and figure-of-merit (FoM) of -180dBc/Hz.</p>
Journal
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- IEICE Transactions on Fundamentals of Electronics, Communications and Computer Sciences
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IEICE Transactions on Fundamentals of Electronics, Communications and Computer Sciences E107.A (5), 741-745, 2024-05-01
The Institute of Electronics, Information and Communication Engineers
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Keywords
Details 詳細情報について
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- CRID
- 1390299993932649856
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- ISSN
- 17451337
- 09168508
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- Text Lang
- en
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- Data Source
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- JaLC
- Crossref
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- Abstract License Flag
- Disallowed