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RF-MBE growth of AlN and GaN on β-Ga<sub>2</sub>O<sub>3 </sub>(-201) substrates.
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- Yamaguchi Tomoya
- Kogakuin Univ.
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- Hayasaki Mahiro
- Kogakuin Univ.
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- Hashimoto Mari
- Kogakuin Univ.
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- Yamaguchi Tomohiro
- Kogakuin Univ.
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- Honda Toru
- Kogakuin Univ.
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- Onuma Takeyoshi
- Kogakuin Univ.
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- Masuya Shatoshi
- Novel Crystal Tech.
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- Sasaki Kohei
- Novel Crystal Tech.
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- Kuramata Akito
- Novel Crystal Tech.
Bibliographic Information
- Other Title
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- β-Ga<sub>2</sub>O<sub>3</sub>(-201)基板へのAlNとGaNのRF-MBE成長.
Journal
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- JSAP Annual Meetings Extended Abstracts
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JSAP Annual Meetings Extended Abstracts 2022.1 (0), 2712-2712, 2022-02-25
The Japan Society of Applied Physics
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Keywords
Details 詳細情報について
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- CRID
- 1390303932788968064
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- ISSN
- 24367613
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- Text Lang
- ja
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- Data Source
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- JaLC
