Growth and Superiority of Epitaxial Graphene on SiC

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  • Kusunoki Michiko
    名古屋大学エコトピア科学研究所，名古屋大学大学院工学研究科化学・生物工学専攻
  • Norimatsu Wataru
    名古屋大学エコトピア科学研究所，名古屋大学大学院工学研究科化学・生物工学専攻

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Other Title
  • SiC上エピタキシャルグラフェンの成長と優位性
  • SiC ジョウ エピタキシャルグラフェン ノ セイチョウ ト ユウイセイ

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Abstract

<p>Graphene is an ideal two dimensional atomic layer, and has been  energetically investigated due to its superior electronic properties for high-speed electronic device applications. In this report, focusing on the SiC surface thermal decomposition method, one of the synthetic methods, the growth mechanism, interface structures between graphene and substrate, and the stacking sequence of epitaxial graphene obtained by observation mainly with transmission electron microscopy were interpreted. In particular, the variety and advantages of influence of polarity or surface step-terrace structure of SiC were introduced, and the topics about peculiar electronic properties, crystallographic anisotropy, nano-ribboned structure, and twisted-stacked structure were reviewed, and then its possibility was discussed. </p>

Journal

  • KENBIKYO

    KENBIKYO 50 (1), 28-38, 2015-04-30

    The Japanese Society of Microscopy

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