Perspective on the present research on native point-defects in semiconductors: A point-defect dilemma?
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- YONENAGA Ichiro
- Tohoku University (Professor emeritus)
Bibliographic Information
- Other Title
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- 点欠陥研究の現状
- 点欠陥研究の現状 : Point-defect dilemma in semiconductors
- テン ケッカン ケンキュウ ノ ゲンジョウ : Point-defect dilemma in semiconductors
- Point-defect dilemma in semiconductors
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Abstract
<p>For semiconductors, numerous research studies on intrinsic point defects have been performed as a long-term issue because of their crucial influence on device functionality and degradation. Currently, there are puzzling variations between the reported values of formation and diffusivity of vacancies and self-interstitials even in Si. After an explanation of the atomic and electronic structures of point-defects, a comprehensive review of what has been studied experimentally and theoretically on the formation energies and entropies of vacancies and self-interstitials and some influences of impurities and pressure on them in Si is given. Then, point-defect studies in Ge and widegap semiconductors are briefly mentioned.</p>
Journal
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- Oyo Buturi
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Oyo Buturi 86 (12), 1040-1051, 2017-12-10
The Japan Society of Applied Physics
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Details 詳細情報について
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- CRID
- 1390564227308245248
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- NII Article ID
- 130007715530
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- NII Book ID
- AN00026679
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- ISSN
- 21882290
- 03698009
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- NDL BIB ID
- 028727637
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- Text Lang
- ja
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- Data Source
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- JaLC
- NDL
- CiNii Articles
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- Abstract License Flag
- Disallowed