Perspective on the present research on native point-defects in semiconductors: A point-defect dilemma?

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  • 点欠陥研究の現状
  • 点欠陥研究の現状 : Point-defect dilemma in semiconductors
  • テン ケッカン ケンキュウ ノ ゲンジョウ : Point-defect dilemma in semiconductors
  • Point-defect dilemma in semiconductors

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Abstract

<p>For semiconductors, numerous research studies on intrinsic point defects have been performed as a long-term issue because of their crucial influence on device functionality and degradation. Currently, there are puzzling variations between the reported values of formation and diffusivity of vacancies and self-interstitials even in Si. After an explanation of the atomic and electronic structures of point-defects, a comprehensive review of what has been studied experimentally and theoretically on the formation energies and entropies of vacancies and self-interstitials and some influences of impurities and pressure on them in Si is given. Then, point-defect studies in Ge and widegap semiconductors are briefly mentioned.</p>

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  • Oyo Buturi

    Oyo Buturi 86 (12), 1040-1051, 2017-12-10

    The Japan Society of Applied Physics

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