Ni micro-plating bonding for power device interconnection

DOI Web Site
  • TATSUMI Kohei
    Information, Production and Systems, Graduate School of Waseda University
  • IIZUKA Tomonori
    Information, Production and Systems, Research Center, Waseda University

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Other Title
  • Niメッキによる高生産性パワーデバイス接合技術
  • Ni メッキ ニ ヨル コウセイサンセイ パワーデバイス セツゴウ ギジュツ

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Abstract

<p>The improvement of interconnection technology is becoming a top priority for the operation of high power devices such as SiC devices, at higher temperatures. We proposed a new interconnection method using nickel electroplating to form bonds between the chip electrodes and Cu substrates or Cu leads of lead-frames. The reliability of the bonds was considered from the viewpoint of the Ni/Cu interface behavior through inter-diffusion, surface stability of Ni deposited on Cu, and the Ni/Ni connection at elevated temperatures. SiC devices assembled with the Ni plating interconnection were confirmed to operate successfully in a high temperature environment over 300°C.</p>

Journal

  • Oyo Buturi

    Oyo Buturi 86 (2), 112-116, 2017-02-10

    The Japan Society of Applied Physics

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