SiC device process technology

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Other Title
  • SiCプロセス技術
  • 基礎講座 基礎編 パワーエレクトロニクスの基礎(4)SiCプロセス技術
  • キソ コウザ キソヘン パワーエレクトロニクス ノ キソ 4 SiC プロセス ギジュツ

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Abstract

<p>The process technology of SiC, a wide bandgap semiconductor suited for high-voltage and low-loss power devices, is reviewed.To fabricate SiC-based devices, novel process technology is required such as high-temperature annealing.Fundamental issues in ion implantation, dry etching, an oxidation process for forming a metal-oxide-semiconductor interface, and Schottky and ohmic contacts of SiC are described.</p>

Journal

  • Oyo Buturi

    Oyo Buturi 74 (3), 371-375, 2005-03-10

    The Japan Society of Applied Physics

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