Formation of semiconductor nanostructures by metalorganic vapor phase epitaxy

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  • FUKUI Takashi
    Research Center for Integrated Quantum Electronics, Hokkaido University Graduate School of Information Science and Technology, Hokkaido University
  • MOTOHISA Junichi
    Research Center for Integrated Quantum Electronics, Hokkaido University

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Other Title
  • 有機金属気相成長法によるナノ構造の作製
  • ユウキ キンゾク キソウ セイチョウホウ ニ ヨル ナノ コウゾウ ノ サクセイ

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Abstract

<p>A selective area metalorganic vapor phase epitaxial (SA-MOVPE) growth method for the formation of III-V semiconductor nanostructures is demonstrated.　During crystal growth, various kinds of facets appear at the mask edge, and facet formation can be controlled by the mask pattern and crystal growth conditions. Utilizing this faceting nature, we successfully fabricated single electron transistors (SETs) in order to form a conducting island connected with electrodes through tunneling barriers, and their integrated logic circuits. AND/NAND SET logic based on binary decision diagram (BDD) logic, and a SET one bit adder were successfully fabricated. We also apply this technique to form photonic crystals, nanowires which are as narrow as 50 nm, and two-dimensional Kagome lattices.</p>

Journal

  • Oyo Buturi

    Oyo Buturi 73 (5), 593-598, 2004-05-10

    The Japan Society of Applied Physics

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