Quasi-ballistic electron transport in nanoscale semiconductor structures
-
- SANO Nobuyuki
- Institute of Applied Physics, University of Tsukuba
Bibliographic Information
- Other Title
-
- ナノスケール半導体構造における準弾道電子輸送
- ナノスケール ハンドウタイ コウゾウ ニ オケル ジュンダンドウ デンシ ユソウ
Search this article
Abstract
<p>Ultrasmall semiconductor devices with the effective channel length below 10 nm are now actively investigated theoretically and experimentally, although the symptom of the scaling limit also seems to appear. Under such circumstances, understanding the physical mechanism of electron transport is getting increasingly important for breaking through the technological limits. In the present paper, we present our recent results in the study of electron transport in nanoscale device structures. It is shown that, contrary to the naive picture of ballistic transport, electron transport is quasi-ballistic even in nanoscale devices, in which diffusive electrons associated with the boundary layer in the channel region as well as ballistic electrons contribute to electron transport.</p>
Journal
-
- Oyo Buturi
-
Oyo Buturi 76 (10), 1135-1141, 2007-10-10
The Japan Society of Applied Physics
- Tweet
Keywords
Details 詳細情報について
-
- CRID
- 1390564227314009984
-
- NII Article ID
- 10019956738
-
- NII Book ID
- AN00026679
-
- ISSN
- 21882290
- 03698009
-
- NDL BIB ID
- 8966501
-
- Text Lang
- ja
-
- Data Source
-
- JaLC
- NDL
- CiNii Articles
- KAKEN
-
- Abstract License Flag
- Disallowed
