Electronic band structure and lattice distortion in MoS2/MoSe2 heterostructure measured by STM/STS

Fujii Naoki, Murase Kota, Yoshida Shoji, Kobayashi Yu, Miyata Yasumitu, Takeuchi Osamu, Hidemi Shigekawa

doi:10.14886/jvss.2019.0_1hp03

Bibliographic Information

Other Title

MoS2/MoSe2ヘテロ接合界面電子状態における格子歪の影響

Description

Because band alignment of transition metal dichalcogenide atomic layer hetero structure is strongly affected by lattice strain in addition to the band offset, direct measurement of the band alignment at the interface is required. Therefore, we used STM/STS to simultaneously measure lattice strain and electronic state at MoS₂/MoSe₂ hetero structure interface. We found that the energy position of the valance band edge is largely shifted by the influence of lattice distortion, and the reduction of the band gap energy as much as 0.5 eV occurs at the interface.

Journal

Abstract book of Annual Meeting of the Japan Society of Vacuum and Surface Science

Abstract book of Annual Meeting of the Japan Society of Vacuum and Surface Science 2019 (0), 1Hp03-, 2019

The Japan Society of Vacuum and Surface Science

Details 詳細情報について

CRID: 1390564227329737216

NII Article ID: 130007737553

DOI: 10.14886/jvss.2019.0_1hp03

ISSN: 24348589

Text Lang: ja

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JaLC
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Electronic band structure and lattice distortion in MoS<sub>2</sub>/MoSe<sub>2</sub> heterostructure measured by STM/STS