書誌事項
- タイトル別名
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- Experimental Verification and Loss Analysis of MHz-operating Discontinuous Current-mode Grid-tied Inverter using GaN-HEMT Device
- GaN-HEMT デバイス オ モチイタ デンリュウ フレンゾク モード ケイトウレンケイ インバータ ノ MHz ウンテン ニ オケル ドウサ ケンショウ オヨビ ソンシツ ノ カイセキ
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説明
<p>This paper studies a grid-tied inverter using a gallium nitride (GaN) device aiming for passive component size reduction through very-high-switching-frequency operation. This paper proposes to apply a discontinuous current mode (DCM), which does not require dead time and current feedback control that are usually required for a continuous current mode (CCM) operation. These features enable good modulation performance with a MHz-class high-switching-frequency operation without difficulties owing to the very high switching frequency. This paper reports experimental demonstrations of the DCM grid-tied inverter using GaN- high-electron-mobility transistors (GaN-HEMT) with 1-MHz carrier frequency and three different filter components. Output current harmonics and losses are discussed, and it is indicated that chip inductors are promising for DCM-operated low-power inverters.</p>
収録刊行物
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- 電気学会論文誌D(産業応用部門誌)
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電気学会論文誌D(産業応用部門誌) 139 (3), 249-257, 2019-03-01
一般社団法人 電気学会
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詳細情報 詳細情報について
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- CRID
- 1390564238078916992
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- NII論文ID
- 130007606298
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- NII書誌ID
- AN10012320
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- ISSN
- 13488163
- 09136339
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- NDL書誌ID
- 029553125
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可