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- Tamaoki Naoki
- 東芝メモリ株式会社メモリ技術研究所デバイス技術研究開発センター
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- Aoki Nobutoshi
- 東芝メモリ株式会社メモリ技術研究所デバイス技術研究開発センター
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- Aochi Hideaki
- 東芝メモリ株式会社メモリ技術研究所デバイス技術研究開発センター
Bibliographic Information
- Other Title
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- フラッシュメモリの現状と課題
- フラッシュメモリ ノ ゲンジョウ ト カダイ
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Abstract
<p>Flash memory with NAND structure (NAND flash memory) is widely used for mobile devices, cell phones, PC’s, and for storage devices in the internet-data-center recently. Conventional two-dimensional (2D) NAND flash memory has serious problems to realize the shrinkage of cell size beyond the 15 nm generation. In order to overcome the problems, two novel nano-technologies, namely Punch & Plug process and BiCS FLASH, have been developed. These innovations have resulted in commercially viable 3D flash memory, providing key technologies for fast, low-energy consumption and high-density memory devices. In this review, we discuss this state-of-the-art 3D flash memory technology.</p>
Journal
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- Butsuri
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Butsuri 73 (9), 648-657, 2018-09-05
The Physical Society of Japan
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Details 詳細情報について
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- CRID
- 1390564238088074368
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- NII Article ID
- 130007638825
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- NII Book ID
- AN00196952
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- ISSN
- 24238872
- 00290181
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- NDL BIB ID
- 029196806
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- Text Lang
- ja
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- Data Source
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- JaLC
- NDL
- CiNii Articles
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- Abstract License Flag
- Disallowed