[Poster Session]A Lateral Electric Field Charge Modulator without Negative Gate Bias

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  • [ポスター講演]負電圧駆動が不要なラテラル電界制御変調素子
  • ポスター コウエン フデンアツ クドウ ガ フヨウ ナ ラテラル デンカイ セイギョ ヘンチョウ ソシ

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Abstract

This paper presents a new pixel structure for a lateral electric field charge modulator without negative gate bias. The proposed pixel structure employs p-type gates as well as n-type gates unlike the conventional structure in which the only n-type gates is used. Since the bipolar-gates structure helps to attract holes at zero bias by work function difference between the p-type gate and p-substrate. The negative gate bias is not required in the modulation pulses. It makes easy to introduce an in-pixel buffer, which plays an important role for high-speed charge modulation. The test chip fabricated in 0.11 um CIS technology demonstrates the hole attraction effect, and the modulation contrast is measured to be 97%.

Journal

  • ITE Technical Report

    ITE Technical Report 40.15 (0), 9-12, 2016

    The Institute of Image Information and Television Engineers

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