グラフェン応用電界効果型トランジスタ光感受性の基礎検討

DOI Web Site
  • GOUNDAR Jowesh
    東北大学大学院工学研究科ファインメカニクス専攻
  • 鈴木 研
    東北大学大学院工学研究科附属先端材料強度科学研究センター
  • 三浦 英生
    東北大学大学院工学研究科附属先端材料強度科学研究センター

書誌事項

タイトル別名
  • Photosensitivity of Graphene Based Field-Effect Transistor

抄録

<p>In this study, the photosensitivity of a monolayer-graphene-based field effect transistor (G-FET) was investigated experimentally. The fundamental layer of graphene was used to understand the device physics under light-on and off conditions. At first, an efficient, low cost fabrication process was developed for the synthesis of high-quality monolayer graphene. A graphene film was synthesized on a copper foil using a low-pressure thermal chemical vapor deposition (LP-CVD) method at 1035°C for 10 minutes. The synthesized graphene was, then, transferred to a silicon-dioxide/silicon (SiO2/Si) substrate using a poly methyl methacrylate (PMMA)-assisted method. The quality of the synthesized graphene was validated using scanning electron microscopy (SEM) and Raman spectroscopy. The SEM observation confirmed that the average size of graphene sheets was as large as 300μm while no significant D – peak was observed from the Raman spectrum, indicating the high quality of graphene. A thin layer of platinum/gold (Pt/Au) was deposited as source and drain electrodes for the FET using electron beam (EB) deposition technique. Finally, the photosensitivity of the fabricated G-FET was investigated under light-on and off conditions. The device showed an external photo responsivity of approximately 200 μA/W at an incident power of 1 mW.</p>

収録刊行物

  • 年次大会

    年次大会 2018 (0), J2220101-, 2018

    一般社団法人 日本機械学会

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