Photosensitivity of Graphene Based Field-Effect Transistor

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  • GOUNDAR Jowesh
    Department of Finemechanics, Graduate School of Engineering, Tohoku University
  • SUZUKI Ken
    Fracture and Reliability Research Institute, Graduate School of Engineering, Tohoku University
  • MIURA Hideo
    Fracture and Reliability Research Institute, Graduate School of Engineering, Tohoku University

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Other Title
  • グラフェン応用電界効果型トランジスタ光感受性の基礎検討

Abstract

<p>In this study, the photosensitivity of a monolayer-graphene-based field effect transistor (G-FET) was investigated experimentally. The fundamental layer of graphene was used to understand the device physics under light-on and off conditions. At first, an efficient, low cost fabrication process was developed for the synthesis of high-quality monolayer graphene. A graphene film was synthesized on a copper foil using a low-pressure thermal chemical vapor deposition (LP-CVD) method at 1035°C for 10 minutes. The synthesized graphene was, then, transferred to a silicon-dioxide/silicon (SiO2/Si) substrate using a poly methyl methacrylate (PMMA)-assisted method. The quality of the synthesized graphene was validated using scanning electron microscopy (SEM) and Raman spectroscopy. The SEM observation confirmed that the average size of graphene sheets was as large as 300μm while no significant D – peak was observed from the Raman spectrum, indicating the high quality of graphene. A thin layer of platinum/gold (Pt/Au) was deposited as source and drain electrodes for the FET using electron beam (EB) deposition technique. Finally, the photosensitivity of the fabricated G-FET was investigated under light-on and off conditions. The device showed an external photo responsivity of approximately 200 μA/W at an incident power of 1 mW.</p>

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