Influence of the Gas Supply on the Elimination of Impurities and Surface Morphology of δ-Bi<sub>2</sub>O<sub>3</sub> Thin Film under Atmospheric Pressure by Means of Halide CVD on C-Sapphire

DOI Web Site Web Site 16 References
  • TAKEYAMA Tomoharu
    Graduate School of Science and Technology, Shizuoka University
  • TAKAHASHI Naoyuki
    Department of Materials Science and Technology, Faculty of Engineering, Shizuoka University
  • NAKAMURA Takato
    Department of Materials Science and Technology, Faculty of Engineering, Shizuoka University
  • ITOH Setsuro
    Research Center, Asahi Glass Co., Ltd

Bibliographic Information

Other Title
  • Influence of the Gas Supply on the Elimination of Impurities and Surface Morphology of δ-Bi2O3 Thin Film under Atmospheric Pressure by Means of Halide CVD on C-Sapphire
  • Influence of the Gas Supply on the Elimination of Impurities and Surface Morphology of デルタ Bi2O3 Thin Film under Atmospheric Pressure by Means of Halide CVD on C Sapphire

Search this article

Abstract

<p>This report describes that the influence of the gas supply on the decrease of impurities and surface morphology of δ-Bi2O3 thin film by means of chemical vapor deposition under atmospheric pressure using BiI3 and O2 gas as starting materials. X-ray photoelectron spectroscopy and Energy dispersive X-ray spectrometer analyses revealed the remarkable decrease of impurities from the deposited film when put close to 60 mm against the O2 gas line. By changing growth position, the incorporation of the iodine was completely suppressed. Obtained iodine-free δ-Bi2O3 thin film was not flat than that of the previous report, but also had a rather irregular shape and the average grain size was a few micrometers.</p>

Journal

  • Electrochemistry

    Electrochemistry 73 (10), 883-886, 2005-10-05

    The Electrochemical Society of Japan

References(16)*help

See more

Keywords

Details 詳細情報について

Report a problem

Back to top