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- Park Himchan
- The Department of Electronic Engineering, Sogang University
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- Kim Kyunghoon
- The Department of Electronic Engineering, Sogang University
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- Yu Changzhi
- The Department of Electronic Engineering, Sogang University
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- Chong Eugene
- The Agency for Defense Development
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- Burm Jinwook
- The Department of Electronic Engineering, Sogang University
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- Park Byeonghwang
- The Agency for Defense Development
抄録
<p>To minimize the characteristic variation of SPADs (Single-Photon Avalanche Photo Diodes) with bias, a current mirror based quenching bias circuit is implemented and tested for Single Photon Detection. With the proposed quenching bias circuit, the operational bias variation of SPADs is successfully reduced. A SPAD and quenching bias circuit are integrated in a 43 µm × 43 µm area to make a micro pixel. The optimized bias circuit maximizes the photon detection area to have more than 50% fill factor. This paper is based on a 0.18 µm standard CMOS process with thick gate oxide option.</p>
収録刊行物
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- IEICE Electronics Express
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IEICE Electronics Express 16 (23), 20190657-20190657, 2019
一般社団法人 電子情報通信学会
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詳細情報 詳細情報について
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- CRID
- 1390565134803418368
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- NII論文ID
- 130007760423
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- ISSN
- 13492543
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可