TEM Study of Structural Phase Transition in Cubic Phase GaN Grown on GaAs (001) with AlGaAs Intermediated Layer

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  • AlGaAsバッファ層を有するGaAs(001)基板上に成長させた立方晶GaNの構造相転移のTEMによる研究
  • AlGaAs バッファソウ オ ユウスル GaAs 001 キバン ジョウ ニ セイチョウ サセタ リッポウショウ GaN ノ コウゾウ ソウ テンイ ノ TEM ニ ヨル ケンキュウ

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<p>Structural phase transition in cubic GaN layers grown by metalorganic vapor phase epitaxy on GaAs (001) substrates using AlGaAs as an intermediated layer was analyzed by transmission electron microscopy. Roles of the AlGaAs intermediated layer on structural phase transition in nano-scale of cubic GaN layers have been focused. The inserted AlGaAs layer is found to play as a protection layer to prevent the GaAs substrate from thermal decomposition at higher growth temperatures (>900°C) of GaN. This enables us to grow GaN layer on GaAs substrate without a generation of voids at the GaN/AlGaAs interface. On the other hand, the generation of voids, which was observed from the cubic GaN/GaAs/AlGaAs/GaAs (001) structure, was found to stop by the AlGaAs intermediate layer. It is evidenced that, however, the AlGaAs intermediated layer induced the structural phase transition from cubic to hexagonal phases in the GaN top layer. The existence of nano-scale structural phase transition from cubic to cubic/hexagonal mixed phases and their epitaxial relationship in the cubic GaN layer were analyzed through the observation with TEM measurements. This result was confirmed by the results obtained from photoluminescence and Raman scattering measurements.</p>

Journal

  • KENBIKYO

    KENBIKYO 45 (1), 13-17, 2010-03-30

    The Japanese Society of Microscopy

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