書誌事項
- タイトル別名
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- SWIR Detection of Front Side Illumination InGaAs PhotoFETs on Si Substrate through Layer Transfer Technology
- テンシャ ギジュツ オ モチイタ Si キバン ジョウ ノ ヒョウメン ショウシャガタ InGaAs PhotoFETs ニ ヨル セキガイセン ケンシュツ
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<p>InGaAs photo field-effect transistors (photoFETs) on Si is one of the promising candidates for a high responsivity Short-Wave Infra-Red (SWIR) photodetector toward monolithic integration with Si-LSI. We have demonstrated InGaAs photoFETs integrated on Si through layer transfer technology. According to the scanning transmission electron microscopy (STEM) and Raman measurement, the InGaAs layer was transferred onto Si without the degradation of crystal quality or the introduction of strain. To evaluate the SWIR photosensitivity of InGaAs photoFETs, we derive the spectral responsivity characteristics at a constant incident power from 1000 nm to 1800 nm. It is found that InGaAs photoFETs present higher and broader responsivity than that of InGaAs photodiode in the SWIR region.</p>
収録刊行物
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- 表面と真空
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表面と真空 64 (2), 74-79, 2021-02-10
公益社団法人 日本表面真空学会
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詳細情報 詳細情報について
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- CRID
- 1390568617218944128
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- NII論文ID
- 130007985482
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- NII書誌ID
- AA12808657
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- ISSN
- 24335843
- 24335835
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- NDL書誌ID
- 031304382
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
- KAKEN
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- 抄録ライセンスフラグ
- 使用不可