Thinning technology of MgO substrate for diamond growth by laser slicing
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- YAMADA Yohei
- Graduate School of Science and Engineering, Saitama University
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- IKENO Junichi
- Graduate School of Science and Engineering, Saitama University
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- SUZUKI Hideki
- Shin-Etsu Polymer Co., Ltd.
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- NOGUCHI Hitoshi
- Shin-Etsu Chemical Co., Ltd.
Bibliographic Information
- Other Title
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- レーザスライシングによるダイヤモンド成長基板MgOの薄化技術
Abstract
<p>We tried laser slicing of (100) MgO wafer used as a substrate for heteroepitaxial growth of single crystal diamond. The laser slicing was successful by irradiating the inside of the material with an ultrashort pulse laser and generating a {100} cleavage. However, it was clarified that the cleavage of {100} was excessively extended and deviated from the slicing surface, so that steps of 20 μm were formed on the peeled surface. In order to reduce the kerf-loss, it was necessary to control the cleavage of {100}. Therefore, we proposed a scanning method to control cleavage and its extension. As a result, we succeeded in slicing a 2-inch MgO wafer with a kerf-loss of 30 μm.</p>
Journal
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- Transactions of the JSME (in Japanese)
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Transactions of the JSME (in Japanese) 87 (896), 21-00022-21-00022, 2021
The Japan Society of Mechanical Engineers
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Details 詳細情報について
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- CRID
- 1390569302468347776
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- NII Article ID
- 130008029730
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- ISSN
- 21879761
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- Text Lang
- ja
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- Data Source
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- JaLC
- Crossref
- CiNii Articles
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- Abstract License Flag
- Disallowed