Quantum devices based on single photon sources in silicon carbide

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  • OHSHIMA Takeshi
    National Institutes for Quantum and Radiological Science and Technology

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Other Title
  • SiC結晶中の単一光子源を利用した量子デバイス
  • SiC ケッショウ チュウ ノ タンイツ ミツコ ゲン オ リヨウ シタ リョウシ デバイス

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Description

<p>Single photon sources (SPSs) in silicon carbide (SiC), such as a silicon vacancy (VSi), a divacancy (VSiVC), carbon antisite-carbon vacancy pairs (CSiVC), nitrogen-vacancy pairs (NCVSi) and a surface SPS, are regarded as candidates for quantum bits (Qubits). To apply these SPSs to quantum applications, it is important to understand their optical and spin properties. Spins in single VSi, VSiVC and NCVSi can be manipulated using optically detected magnetic resonance techniques. CSiVC and a surface SPS show luminescence with extreme brightness even at room temperature. To realize quantum devices, methodologies for the introduction of SPSs into devices are also important. The creation of a VSi in certain locations of SiC diodes without their degradation was demonstrated using a proton beam writing technique.</p>

Journal

  • Oyo Buturi

    Oyo Buturi 90 (6), 351-354, 2021-06-05

    The Japan Society of Applied Physics

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