A High Optical Performance 3.4 μm Pixel Pitch Global Shutter CMOS Image Sensor with Light Guide Structure

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  • 光導波路構造により高い光学性能を有する3.4μm画素ピッチグローバルシャッターCMOSイメージセンサ

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Description

We describe a high optical performance 3.4 μm pixel pitch global shutter CMOS image sensor with a light guide structure. The sensitivity and the parasitic light sensitivity are 28,000 e-/lx·s and -89 dB, respectively. Moreover, the incident light angle dependence of sensitivity and parasitic light sensitivity has been improved by the light guide structure. The pixel achieves 1.8 e- temporal noise and full well capacity of 16,200 e- with charge domain memory in 120 fps operation by multiple accumulation shutter technology.

Journal

  • ITE Technical Report

    ITE Technical Report 41.32 (0), 5-8, 2017

    The Institute of Image Information and Television Engineers

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