Atom probe tomography of high-performance Si solar cells

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  • SHIMIZU Yasuo
    Research Center for Magnetic and Spintronic Materials, National Institute for Materials Science

Bibliographic Information

Other Title
  • 高性能Si太陽電池の3次元アトムプローブ解析
  • 高性能Si太陽電池の3次元アトムプローブ解析 : 水素検出によるSiヘテロ接合および微結晶粒の可視化へ
  • コウセイノウ Si タイヨウ デンチ ノ 3ジゲン アトムプローブ カイセキ : スイソ ケンシュツ ニ ヨル Si ヘテロ セツゴウ オヨビ ビケッショウリュウ ノ カシカ エ
  • Towards the visualization of Si heterojunctions and nanocrystallites via hydrogen detection
  • 水素検出によるSiヘテロ接合および微結晶粒の可視化へ

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Description

<p>Atom probe tomography (APT) is a method for obtaining three-dimensional (3D) distributions of elements in materials with nearly atomic-scale resolution. While APT has attracted considerable attention as a promising 3D analysis for various materials and their device structures owing to upgrading the APT system in terms of hardware and software, successful data acquisition relies substantially on a desired preparation of needle-shaped specimens. In this article, technical advances for near-surface analysis on textured (non-flat) samples using a site-specific lift-out method processed with a focused ion beam are provided. As an application of research with APT, the author reviews a trial of the quantification of hydrogen in hydrogenated amorphous Si (a-Si:H) in high-performance Si solar cells and 3D mapping of nanocrystallites embedded in a-Si:H via hydrogen depletion.</p>

Journal

  • Oyo Buturi

    Oyo Buturi 90 (10), 610-616, 2021-10-05

    The Japan Society of Applied Physics

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