Investigation of point defects in GaN for the realization of high performance GaN vertical power devices

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  • GaN縦型パワーデバイス実現に向けた点欠陥評価
  • GaN タテガタ パワーデバイス ジツゲン ニ ムケタ テン ケッカン ヒョウカ

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Abstract

<p>Fundamental knowledge of point defects is essential for developing epitaxial growth, device processes and device design and characterization. However, the knowledge with regard to GaN is quite limited compared to Si and GaAs. The authors have carried out an extensive investigation of point defects in GaN by using deep-level transient spectroscopy (DLTS). In this paper, the origin of the E3 trap, the development of quantitative measurement techniques for carbon-related hole traps in GaN by using sub-bandgap photoexcitation and studies of nitrogen-displacement-related point defects (nitrogen vacancy and interstitial) intentionally formed by electron beam irradiation are reviewed.</p>

Journal

  • Oyo Buturi

    Oyo Buturi 90 (10), 628-631, 2021-10-05

    The Japan Society of Applied Physics

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