<i>β</i>-Ga<sub>2</sub>O<sub>3</sub> Single Crystal Growth by the Vertical Bridgman Method
-
- Hoshikawa Keigo
- Faculty of Engineering, Shinshu University
-
- Kobayashi Tsuyoshi
- Faculty of Engineering, Shinshu University
-
- Kobayashi Takumi
- Fujikoshi Machinery Corp.
Bibliographic Information
- Other Title
-
- 垂直ブリッジマン法<i>β</i>-Ga<sub>2</sub>O<sub>3</sub>バルク単結晶成長
Abstract
<p>β-Ga2O3 single crystal growth by the vertical Bridgman method using a platinum-rhodium alloy crucible in ambient air was studied. 2-inch diameter β-Ga2O3 single crystals with the growth direction perpendicular to (100), (010) and (001) planes were grown and machined wafers with each plane were produced. Large sized crystals with 3-inch and 4-inch diameter have been successfully grown by the same technique.</p>
Journal
-
- Journal of the Japanese Association for Crystal Growth
-
Journal of the Japanese Association for Crystal Growth 48 (3), n/a-, 2021
The Japanese Association for Crystal Growth
- Tweet
Details 詳細情報について
-
- CRID
- 1390571395582855552
-
- NII Article ID
- 130008110710
-
- ISSN
- 21878366
- 03856275
-
- Text Lang
- ja
-
- Data Source
-
- JaLC
- CiNii Articles
-
- Abstract License Flag
- Disallowed