<i>β</i>-Ga<sub>2</sub>O<sub>3</sub> Single Crystal Growth by the Vertical Bridgman Method

DOI

Bibliographic Information

Other Title
  • 垂直ブリッジマン法<i>β</i>-Ga<sub>2</sub>O<sub>3</sub>バルク単結晶成長

Abstract

<p>β-Ga2O3 single crystal growth by the vertical Bridgman method using a platinum-rhodium alloy crucible in ambient air was studied. 2-inch diameter β-Ga2O3 single crystals with the growth direction perpendicular to (100), (010) and (001) planes were grown and machined wafers with each plane were produced. Large sized crystals with 3-inch and 4-inch diameter have been successfully grown by the same technique.</p>

Journal

Details 詳細情報について

  • CRID
    1390571395582855552
  • NII Article ID
    130008110710
  • DOI
    10.19009/jjacg.48-3-07
  • ISSN
    21878366
    03856275
  • Text Lang
    ja
  • Data Source
    • JaLC
    • CiNii Articles
  • Abstract License Flag
    Disallowed

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