in-situ連続測定によるAZO透明導電膜の抵抗率の温度変化

DOI 機関リポジトリ (HANDLE)

書誌事項

タイトル別名
  • CONTINUOUS IN-SITU RESISTIVITY MEASUREMENT DURING ANNEALING OF TRANSPARENT CONDUCTIVE ALUMINUM DOPED ZINC OXIDE FILMS

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説明

Aluminum doped zinc oxide (AZO) films (350 nm in thickness) were prepared on glass substrates by RF magnetron sputtering with a ZnO target containing 2 wt.% of Al2O3in pure Ar at 0.1 Pa. The continuous in-situ resistivity measurement was carried out by the four-point probes set in a tube furnace at the temperature range between RT and 500 ˚C in O2and N2.The Hall effect measurement was carried out by means of the Van der Pauw configuration at RT after annealing at the temperature range between 100 and 500 ˚C in O2 and N2. Structure of deposited films was examined by X-ray diffractometer (XRD) and Transmission Electron Microscope (TEM) observation. Since the X-ray diffraction profiles and the TEM images revealed that these as-deposited films were poly-crystalline and their crystal grains did not essentially grow even after annealing up to 500 ˚C, the resistivity was mainly governed by the change of the density of the oxygen vacancy emitting free electrons above 300 ˚C to 500 ˚C. For the oxidizing (O2)atmosphere annealing, the resistivity increased by the oxygen vacancy extinction above 300 ˚C to 500 ˚C while for the non-oxidizing(N2)atmosphere annealing, where extinction did not occur, the resistivity continued to decrease.

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詳細情報 詳細情報について

  • CRID
    1390572174784103040
  • NII論文ID
    120005611534
  • NII書誌ID
    AA12677220
  • DOI
    10.15002/00011076
  • HANDLE
    10114/10377
  • ISSN
    21879923
  • 本文言語コード
    ja
  • 資料種別
    departmental bulletin paper
  • データソース種別
    • JaLC
    • IRDB
    • CiNii Articles
  • 抄録ライセンスフラグ
    使用可

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