Transport Mechanism of Point Defects in Silicon Crystals estimated by Molecular Dynamics
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- Kakimoto Koichi
- Institute of Advanced Material Study Kyushu University
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- Umehara Takeshi
- Osaka Gus Co.,Ltd.
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- Ozoe Hiroyuki
- Institute of Advanced Material Study Kyushu University
Bibliographic Information
- Other Title
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- 等圧下におけるシリコン中の点欠陥の輸送現象
- トウアツカ ニ オケル シリコン チュウ ノ テン ケッカン ノ ユソウ ゲンショウ
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Abstract
Molecular dynamics simulation of vacancy and self-interstitial atoms in silicon crystals was carried out to investigate diffusion mechanism and coefficients of vacancy and self-interstitial atoms. Pressure dependence of diffusion coefficients of the point defects is not significant, although temperature dependence is remarkably large. Large deformation of lattice was observed in an interstitial case, while small lattice distortion was obtained in a vacancy case.
Journal
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- 九州大学機能物質科学研究所報告
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九州大学機能物質科学研究所報告 13 (2), 87-91, 1999-12-24
Institute of Advanced Material Study Kyushu University
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Details 詳細情報について
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- CRID
- 1390572174788963840
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- NII Article ID
- 110006177562
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- NII Book ID
- AN10060378
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- ISSN
- 09143793
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- DOI
- 10.15017/7913
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- HANDLE
- 2324/7913
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- NDL BIB ID
- 4948977
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- Text Lang
- ja
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- Data Source
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- JaLC
- IRDB
- NDL
- CiNii Articles
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- Abstract License Flag
- Allowed