Study of Contact Resistance on Organic Thin-Film Transistor with Surface Treatments
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- Kim Seung Kyum
- Center for Organic photonics and Electronics Research(OPERA), Kyushu University
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- Hattori Reiji
- Art, Science and Technology Center for Cooperative Research(KASTEC), Kyushu University
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Abstract
In organic thin-film transistors (OTFT), the fabrication processes such as surface treatment method, substrate temperature and deposition rate give significant effects on TFT device performance. We have investigated the variation of electrical performance on DNTT-based OTFT devices influenced by the fabrication processes. The DNTT films deposited on HMDS-treated SiO_2 substrates at the substrate temperature of 60℃, resulting in high OTFT performance with mobility greater than 0.56cm^2/(V・s) and I_<on>/I_<off> greater than of 10^6. In addition, the prominent decrease of contact resistance to almost a one-tenth or less is observed from influence of surface treatment process.
Journal
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- Evergreen
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Evergreen 2 (1), 1-5, 2015-03
Transdisciplinary Research and Education Center for Green Technologies, Kyushu University
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Details 詳細情報について
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- CRID
- 1390572174798263680
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- NII Article ID
- 120005603702
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- DOI
- 10.5109/1500421
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- ISSN
- 24325953
- 21890420
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- HANDLE
- 2324/1500421
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- NDL BIB ID
- 026346538
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- Text Lang
- en
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- Data Source
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- JaLC
- IRDB
- NDL
- Crossref
- CiNii Articles
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- Abstract License Flag
- Allowed