Silicon Subsurface Evaluation with Contact Potential Difference

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  • 接触電位差によるSiウェーハ表面層評価
  • セッショク デンイサ ニ ヨル Si ウェーハ ヒョウメンソウ ヒョウカ

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Non-contacting evaluation method using contact potential difference is developed for evaluating subsurface property of silicon wafers. Measured contact differences for n-and ptype silicon crystals were well corresponding to that calculated. Positively and negatively charged surfaces of silicon wafers caused positive and negative contact potentiai difference, respectively. Contact potential differences well reflected damage induced in 200nm depth due to H2 + ion implantation. Contact potential differences reflected microroughness and damage induced by chemomechanical polishing. Influence of Mo and Fe contaminant introduced into epilayer of epitaxial Si wafers was detected to change contact potential difference. Finally, we conclude that contact potential difference measurements enable to revel crystalline property in silicon subsurface.

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