Electronic structure of Si(110)3x2-Bi surface

DOI
  • Konno T.
    Sch. of Mat. and Chem. Tech., Tokyo Tech., Sch. of Sci., Tokyo, Tech.
  • Katsumata R.
    Sch. of Mat. and Chem. Tech., Tokyo Tech., Sch. of Sci., Tokyo, Tech.
  • Kimura A.
    Sch. of Mat. and Chem. Tech., Tokyo Tech., Sch. of Sci., Tokyo, Tech.
  • Nakamura L.
    Sch. of Mat. and Chem. Tech., Tokyo Tech., Sch. of Sci., Tokyo, Tech.
  • Yamazaki S.
    Sch. of Mat. and Chem. Tech., Tokyo Tech., Sch. of Sci., Tokyo, Tech.
  • Ozawa K.
    Sch. of Mat. and Chem. Tech., Tokyo Tech., Sch. of Sci., Tokyo, Tech.
  • Mase K.
    KEK-PF
  • Iimori T.
    Inst. of Solid State Phys., Univ. of Tokyo
  • Komori F.
    Inst. of Solid State Phys., Univ. of Tokyo
  • Hirayama H.
    Sch. of Mat. and Chem. Tech., Tokyo Tech., Sch. of Sci., Tokyo, Tech.
  • Nakatsuji K.
    Sch. of Mat. and Chem. Tech., Tokyo Tech., Sch. of Sci., Tokyo, Tech.

Bibliographic Information

Other Title
  • Si(110)3×2-Bi表面の電子状態

Journal

Keywords

Details 詳細情報について

  • CRID
    1390572433053438592
  • NII Article ID
    130008156164
  • DOI
    10.11316/jpsgaiyo.75.1.0_2087
  • ISSN
    21890803
  • Text Lang
    ja
  • Data Source
    • JaLC
    • CiNii Articles

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