A Study of Antimony Diffusion of DHBTs with Compositionally Graded InGaAsSb Base
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- Hoshi Takuya
- NTT Device Technology Laboratories, NTT Corporation
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- Shiratori Yuta
- NTT Device Technology Laboratories, NTT Corporation
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- Sugiyama Hiroki
- NTT Device Technology Laboratories, NTT Corporation
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- Matsuzaki Hideaki
- NTT Device Technology Laboratories, NTT Corporation
Bibliographic Information
- Other Title
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- 組成傾斜InGaAsSbベースを有するDHBTにおけるアンチモンの拡散について
- ソセイ ケイシャ InGaAsSb ベース オ ユウスル DHBT ニ オケル アンチモン ノ カクサン ニ ツイテ
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Abstract
<p>The impact of the growth order on the Sb diffusion from compositionally-graded-InGaAsSb/highly-doled-GaAsSb base of double heterojunction bipolar transistors (DHBTs) is discussed in this paper. For the conventional emitter-up DHBT wafer, the shift of x-ray diffraction peak of InGaP emitter due to the incorporation of a few percent of Sb is found. On the other hand, there are no pronounced peak shift when the growth order is inverted for the transfer-substrate (TS) DHBTs. Transmission electron microscopy reveals that the abruptness of the emitter-base interface of conventional wafer and base-collector interface of the wafer for the TS-DHBT are degraded. This interface degradation is due to the Sb diffusion into the upper layer of GaAsSb/InGaAsSb base.</p>
Journal
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- IEEJ Transactions on Electronics, Information and Systems
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IEEJ Transactions on Electronics, Information and Systems 142 (3), 342-347, 2022-03-01
The Institute of Electrical Engineers of Japan
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Details 詳細情報について
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- CRID
- 1390573242454888704
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- NII Article ID
- 130008165824
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- NII Book ID
- AN10065950
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- ISSN
- 13488155
- 03854221
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- NDL BIB ID
- 032021080
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- Text Lang
- ja
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- Data Source
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- Abstract License Flag
- Disallowed