Fabrication of MFSFET with ferroelectric non-doped HfO<sub>2</sub> utilizing Hf interfacial layer
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- Hayashi Masaki
- Tokyo Tech
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- Kataoka Masakazu
- Tokyo Tech
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- Kim Min Gee
- Tokyo Tech
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- Ohmi Shun-ichiro
- Tokyo Tech
Bibliographic Information
- Other Title
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- Hf界面層を用いた強誘電性ノンドープHfO<sub>2</sub>の薄膜化とMFSFETへの応用
Journal
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- JSAP Annual Meetings Extended Abstracts
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JSAP Annual Meetings Extended Abstracts 2020.2 (0), 899-899, 2020-08-26
The Japan Society of Applied Physics
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Keywords
Details 詳細情報について
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- CRID
- 1390573407640489984
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- ISSN
- 24367613
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- Text Lang
- ja
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- Data Source
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- JaLC