Analysis and Design of a Linear Ka-Band Power Amplifier in 65-nm CMOS for 5G Applications

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  • YU Chongyu
    Institute of RF- & OE-ICs, School of Information Science and Engineering, Southeast University
  • FENG Jun
    Institute of RF- & OE-ICs, School of Information Science and Engineering, Southeast University

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<p>A linear and broadband power amplifier (PA) for 5G phased-array is presented. The design improves the linearity by operating the transistors in deep class AB region. The design broadens the bandwidth by applying the inter-stage weakly-coupled transformer. The theory of transformers is illustrated by analyzing the odd- and even-mode model. Based on this, the odd-mode Q factor is used to evaluate the quality of impedance matching. Weakly- and strongly-coupled transformers are compared and analyzed in both the design process and applicable characteristics. Besides, a well-founded method to achieve the transformer-based balanced-unbalanced transformation is proposed. The fully integrated two-stage PA is designed and implemented in a 65-nm CMOS process with a 1-V power supply to provide a maximum small-signal gain of 19dB. The maximum output 1-dB compressed power (P1dB) of 17.4dBm and the saturated output power (PSAT) of 18dBm are measured at 28GHz. The power-added efficiency (PAE) of the P1dB is 26.5%. From 23 to 32GHz, the measured P1dB is above 16dBm, covering the potential 5G bands worldwide around 28GHz.</p>

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