Analysis of Switching Noise Mechanism and Proposal of Improvement Measures Focused on Capacitance-Voltage Characteristics of Superjunction-MOSFET

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  • SJ-MOSFETの容量特性に着目したスイッチングノイズメカニズム分析と対策法の提案

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<p>The switching noise mechanism of a high voltage superjunction-MOSFET loaded into a power supply is analyzed. The device model is developed using BSIM3 MOSFET model with voltage-dependent capacitors. Inductive load switching with test-circuit parasitic elements is simulated, and the switching surge generated during turn-off transient is discussed. A sharp drop of drain-source capacitance (Cds at the turn-off transient causes high voltage ringing, whose frequency is determined using total capacitances and stray inductances in the power loop circuit. The optimization of Cds-voltage characteristic and additional Cgs with small capacitance are proposed as an effective method for suppressing surge generation. The voltage ringing level is improved by slightly modifying the Cds-voltage curve and additional Cgs. In addition, test results show that the radiated EMI decreased.</p>

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