Selective epitaxial growth of doped GaN by pulsed sputtering
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- Ueno Kohei
- IIS, UTOKYO
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- Imabeppu Hideyuki
- IIS, UTOKYO
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- Kobayashi Atsushi
- IIS, UTOKYO
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- Ohta Jitsuo
- IIS, UTOKYO JST-PRESTO
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- Fujioka Hiroshi
- IIS, UTOKYO JST-ACCEL
Bibliographic Information
- Other Title
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- 不純物添加GaNの位置選択エピ成長技術の開発
Journal
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- JSAP Annual Meetings Extended Abstracts
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JSAP Annual Meetings Extended Abstracts 2017.2 (0), 3370-3370, 2017-08-25
The Japan Society of Applied Physics
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Keywords
Details 詳細情報について
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- CRID
- 1390575418087105664
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- ISSN
- 24367613
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- Text Lang
- ja
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- Data Source
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- JaLC