Characterization of SiC Wafer/Device Using a Laser Terahertz Emission Microscope
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- Nakanishi Hidetoshi
- SCREEN
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- Nishimura Tatsuhiko
- SCREEN
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- Kitamura Fujikazu
- SCREEN
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- Mizubata Minoru
- SCREEN
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- Sakai Yuji
- ILE Osaka Univ.
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- Kawayama Iwao
- ILE Osaka Univ.
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- Tonouchi Masayoshi
- ILE Osaka Univ.
Bibliographic Information
- Other Title
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- レーザーテラヘルツエミッション顕微鏡によるSiC ウエハ/デバイスの局所特性評価
Journal
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- JSAP Annual Meetings Extended Abstracts
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JSAP Annual Meetings Extended Abstracts 2016.2 (0), 3274-3274, 2016-09-01
The Japan Society of Applied Physics
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Details 詳細情報について
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- CRID
- 1390576656682291328
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- ISSN
- 24367613
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- Text Lang
- ja
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- Data Source
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- JaLC