High-quality graphene growth on Si-terminated SiC single-crystalline thin films by using the hybrid SiC
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- Endo norifumi
- RIEC
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- Akiyama Shoji
- ShinEtsu
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- Tashima Keiichiro
- RIEC
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- Suemitsu Maki
- RIEC
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- Konishi Shigeru
- ShinEtsu
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- Mogi Hiroshi
- ShinEtsu
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- Kawai Makoto
- ShinEtsu
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- Kubota Yoshihiro
- ShinEtsu
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- Horiba Koji
- KEK
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- Fukidome Hirokazu
- RIEC
Bibliographic Information
- Other Title
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- ハイブリッドSiC基板を用いたSi終端SiC単結晶薄膜上高品質グラフェン成長
Journal
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- JSAP Annual Meetings Extended Abstracts
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JSAP Annual Meetings Extended Abstracts 2016.2 (0), 3557-3557, 2016-09-01
The Japan Society of Applied Physics
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Details 詳細情報について
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- CRID
- 1390576656682489856
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- ISSN
- 24367613
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- Text Lang
- ja
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- Data Source
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- JaLC