Operando XAFS Measurements of V-Oxide Thin-Film Devices Under Electric Voltages

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  • WADATI Hiroki
    Institute for Solid State Physics, The University of Tokyo Graduate School of Material Science, University of Hyogo Institute of Laser Engineering, Osaka University
  • ZHANG Yujun
    Institute for Solid State Physics, The University of Tokyo Graduate School of Material Science, University of Hyogo
  • SETOYAMA Hiroyuki
    Kyushu Synchrotron Light Research Center
  • HOTTA Yasushi
    Department of Engineering, University of Hyogo
  • NEMOTO Ryoichi
    Department of Engineering, University of Hyogo

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Other Title
  • バナジウム酸化物薄膜デバイスの電圧印加中のオペランドXAFS測定
  • バナジウム サンカブツ ハクマク デバイス ノ デンアツ インカ チュウ ノ オペランド XAFS ソクテイ

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<p>In this study, we performed operando XAFS (X-ray absorption fine structure) measurements under voltage application on thin films of a perovskite-type vanadium oxide La1−xSrxVO3 grown on a silicon substrate. These materials are not band insulators but Mott insulators due to the Coulomb repulsion between electrons. We measured the V K-edge XAFS spectra and the current-voltage characteristics at the same time. By using the energy barrier at the interface between a vanadium oxide and silicon, we expected that the vanadium valence would change with voltage application. However, almost no change in the V K-edge XAFS spectrum was observed under the application of 0-60 V. This result indicates that the region of vanadium valence change may be smaller than the size of the electrode or the carrier number change is limited to about 2 nm at the lower interface and may not be large enough to change the overall V valence.</p>

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